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| MMBT2907AT PNP General Purpose Transistors 1 COLLECTOR 3 3 1 2 BASE 2 SOT-523(SC-75) EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD RJA TJ,Tstg Max 150 833 -55 to +150 Unit mW C/W C DEVICE MARKING MMBT2907AT=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) (2) Collector-Base Breakdown Voltage (IC= -10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) Collector Cutoff Current (VCB= -50 Vdc, IE=0) Emitter Cutoff Current (VEB= -4 Vdc, IC=0) 1.FR-5=1.0 x 0.75 x 0.062 in _ 2. Pulse Test:Pulse Width=300 us, Duty Cycle < 2.0% V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -60 -60 -5.0 -10 -10 Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw MMBT2907AT ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (I C = -0.1 mAdc, VCE= -10 Vdc) (I C = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, V CE = -10 Vdc) (IC = -150 mAdc, VCE= -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (IC = -500 mAdc, IB = -50mAdc) Base-Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15mAdc) (I C= -500 mAdc, IB = -50mAdc) VCE(sat) hFE 75 100 100 100 50 - 300 - - -0.4 -1.6 -1.3 -2.6 Vdc VBE(sat) - - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1) (IC = -2.0 mAdc, VCE=-12Vdc, f=30MHz) Output Capacitance (VCB= -12 Vdc, IE =0, f=1.0MHz) fT CoBo - 140 - - MHz pF - 5.0 ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Out Time Storage Time Fall Time (VCC = -60 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc) (VCC = -30 Vdc, I C= -150 mAdc, IB1= -15 mAdc) t on - 45 10 40 100 80 30 ns td tr t off ts tf WEITRON http://www.weitron.com.tw MMBT2907AT hFE TYPICAL PULSED CURRENT GAIN VCEBAT COLLECTOR EMITTER VOLTAGE (V) 500 VCE=5V 400 300 200 100 0 0.1 0.3 1 3 10 30 100 300 25 C 125 C 0.5 b=10 0.4 0.3 25 C 0.2 0.1 0 1 10 100 500 125 C -40 C -40 C IC COLLECTOR CURRENT(mA) IC COLLECTOR CURRENT(mA) FIG.1 Typical Pulsed Current Gain vs Collector Current FIG.2 Collector-Emitter Saturation Voltage vs collector Current VBEON BASE EMITTER ON VOLTAGE (V) VBEST BASE EMITTER VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0 0.1 VCE=5V 1 0.8 0.6 125 C 0.4 b=10 0.2 0 1 10 100 500 -40 C 25 C -40 C 25 C 125 C 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current FIG.4 Base Emitter ON Voltage vs Collector Current ICBO-COLLECTOR CUREENT (nA) 100 20 CAPACITANCE (pF) VCB=35V 10 16 12 1 Cib 8 4 0 -0.1 0.1 0.01 25 50 75 100 125 Cob -1 -10 -50 TA- AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V) FIG.5 Collector-Cutoff Current vs. Ambient Temperature FIG.6 Input and Output Capacitance vs Reverse Bias Voltage WEITRON http://www.weitron.com.tw MMBT2907AT 250 200 TIME (nS) 500 I IB1=IB2= c 10 VCC=15V ts 400 TIME (nS) I IB1=IB2= c 10 VCC=15V 150 100 50 0 10 tr td 100 tf 300 200 t off 100 t on 0 10 1000 100 1000 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.7 Switching Times vs Collector Current FIG.8 Turn On and Turn Off Times vs Collector Current IB1 TURN ON BASE CURRENT (mA) 50 20 10 tr=15V 5 30ns 2 60ns 1 10 100 500 IC COLLERTOR CURRENT (mA) FIG.9 Rise Time vs Collector and Turn On Base Current WEITRON http://www.weitron.com.tw MMBT2907AT SOT-523 Outline Dimensions (SC-75) Unit:mm A SC-75 B T OP V IE W C D E G H K J L M Dim A B C D E G H J K L M Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 WEITRON http://www.weitron.com.tw |
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